US Grants $150 Million to xLight for EUV Lithography Laser Prototype

The U.S. Department of Commerce and the National Institute of Standards and Technology announced today the final award of $150 million in federal incentives to xLight, Inc. under the CHIPS and Science Act. The funds will support construction and demonstration of a first‑of‑its‑kind free‑electron laser (FEL) prototype, an alternative light source intended to extend the limits of extreme ultraviolet (EUV) lithography. xLight’s platform aims to overcome current bottlenecks by providing greater power, higher efficiency, and improved yield. The prototype will be built at the Albany Nanotech Complex in New York, where the technology will be validated and scaled domestically. The award underscores federal support for advanced semiconductor manufacturing research.

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